BD139/140 are complementary silicon driver transistors designed for audio and switching applications. They come in TO-126 plastic cases. The BD139 is an NPN device and the BD140 is PNP.
Features
• High gain (hFE40-250) • High fT (250MHz for BD139, 75MHz for BD140)
Absolute Maximum Ratings
Collector-Emitter Voltage (VCEO)
BD139 80V
BD140 80V
Collector-Base Voltage (VCBS)
BD139 100V
BD140 100V
Collector Current Continuous (Ic)
BD139/140 1A
Total Device Dissipation (Ptot)
BD139/140 8W
Specifications
DC Current gain (hFF)
@ lc = 150mA 40-250 (BD139/140)
fT(MHz)
BD139 250MHz
BD140 75MHz
Collector-Emitter Saturation Voltage (VCEsat)
@ lc = 500mA 0.5V
(BD139/140) IB = 50mA
The
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