2N3055 Power Transistor

The 2N3055 is a medium speed NPN Silicon Power Transistor designed for general purpose switching and amplifier applications.

Features
• DC current Gain (hFE) = 20-70 @ lc = 4.0A
• Collector-Emitter Saturation Voltage = 1.0V @ lc = 4.0A




Absolute Maximum Ratings

Collector-Emitter Voltage (VCEO) 60v
Collector-Base Voltage (VCBO) 100v
Emitter-Base Voltage (VEB) 7.0v
Collector Current Continuous (lc) 15A
Base Current Continuous (IB) 7A
Total Device Dissipation (Ptot) 115W

Specifications

Collector- Emitter Leakage Current
(VCE = 30V, lB = 0) 0.7mA
DC Current Gain (HFE)
lc = 4.0A VCE = 4.0V 20-70
lc = 10.0A VCE = 4.0V 5 (Minimum)
CoIlector-Emitter Saturation Voltage
IC = 4.0A IB = 0.4A 1.1v
lc = 10.0A IB = 0.4A 8.0V
Ft @ IC = 3.3A 0.8MHz